A single flux quantum Josephson junction memory cell
- 1 October 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (7) , 424-426
- https://doi.org/10.1063/1.1655534
Abstract
Operation of a DRO single flux quantum Josephson junction memory cell is described. Writing and sensing is performed with coincident currents. The device acts as its own sense detector, switching to the gap voltage if a flux quantum was stored. Dense arrays not requiring standby power are potentially feasible.Keywords
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