High Temperature Stable W-GaAs Schottky Barrier
- 1 June 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (6A) , L393
- https://doi.org/10.1143/jjap.21.l393
Abstract
The effect of annealing a W-GaAs (Se+ implanted) Schottky diode at high temperatures was investigated. The diode showed an excellent stability against annealing. The ideal factor n and the barrier height φB of the diode stayed more or less constant at values of 1.1–1.2 and 0.73 V, respectively, for the temperature variation of 800°C–950°C. Using He+ backscattering analysis, it was shown that the interdiffusion in W and GaAs couples takes place at 900°C.Keywords
This publication has 2 references indexed in Scilit:
- Planar GaAs IC technology: Applications for digital LSIIEEE Journal of Solid-State Circuits, 1978
- Effect of alloying behavior on the electrical characteristics of n-GaAs Schottky diodes metallized with W, Au, and PtApplied Physics Letters, 1973