Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
- 13 September 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (11) , 1510-1512
- https://doi.org/10.1063/1.110758
Abstract
Atomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0→PbH and PbH+H0→Pb+H2. The passivation reaction occurs more efficiently keeping the steady‐state Pb density at a low value of only 3–6×1011 cm−2 during atomic hydrogen exposure. This low Pb density can only account for a small fraction of the total number of interface states produced by atomic hydrogen.Keywords
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