Band-edge properties of Hg-based superlattices

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Abstract
Recent advances in the understanding of band-edge properties in Hg-based superlattices are discussed. A systematic consideration of the theoretical band structure as a function of superlattice parameters demonstrates that the in-plane and growth-direction dispersion relations for the uppermost valence band are extremely sensitive to whether the valence-band offset is small or large. Magnetotransport measurements have been performed on a large number of HgTe–CdTe and Hg1−xZnxTe–CdTe superlattices. Band gaps determined from the temperature dependence of the intrinsic carrier density are found to agree well with theoretical values if a large value (350 meV) is employed for the valence-band offset. Furthermore, the electron and hole mobilities display a number of distinctive features which are quite consistent with calculated band structures as long as a large valence-band offset is employed. However, the data and theory cannot be reconciled if a small offset is assumed.

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