Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3 μm DFB-DC-PBH LD

Abstract
Lasing characteristics for a 1.3 μm InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode (DFB-DC-PBH LD) have been remarkably improved by antireflection (AR) coating applied on the front facet. CW single-longitudinal-mode (SLM) operation power as high as 55 mW, and differential quantum efficiency as high as 36%, have been obtained from the coated front facet. CW SLM operation has been achieved up to 105°C.

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