Current status of ion implantation for VLSI applications
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 9-15
- https://doi.org/10.1016/0168-583x(89)90128-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in SiliconJapanese Journal of Applied Physics, 1982
- Arsenic implantation into polycrystalline silicon and diffusion to silicon substrateJournal of Applied Physics, 1977