RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-401
https://doi.org/10.1051/jphyscol:1988484

Abstract

We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work function for arsenic-implanted polysilicon gate on 7 nm SiO2 in a dual work function (n+ and p+) poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals

Keywords

ARSENIC IMPLANTED
IMPLANTED POLYSILICON
THIN OXIDE
THERMAL PROCESSING
RAPID THERMAL
PROCESSING OF ARSENIC

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