Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates

Abstract
Bright electroluminescence has been achieved on silicon substrates for the first time using Zn2SiO4:Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn2SiO4:Mn.

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