Dark current in quantum well infrared photodetectors
- 15 February 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (4) , 2029-2031
- https://doi.org/10.1063/1.353146
Abstract
Modeling the dark current in quantum well infrared photodetectors has been a topic of much recent research, but the implications of many of the underlying assumptions have not been clarified. We attempt to justify one such model and to provide physical insight for its success. We compare the dark current expression with experiments on several samples, and show that the model provides a good approximation for a wide range of device parameters including barrier thicknesses from 250 to 700 Å and number of wells from 4 to 32.This publication has 7 references indexed in Scilit:
- Photoconductive gain mechanism of quantum-well intersubband infrared detectorsApplied Physics Letters, 1992
- Importance of the upper state position in the performance of quantum well intersubband infrared detectorsApplied Physics Letters, 1991
- Current-voltage characteristic of quantum-well heterostructuresSemiconductor Science and Technology, 1991
- Experimental and theoretical studies of the performance of quantum-well infrared photodetectorsJournal of Applied Physics, 1991
- Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorApplied Physics Letters, 1991
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987