A study of vacancy-type defects by positron-lifetime measurements in a II-VI semiconductor: Cd0.2Hg0.8Te
- 28 May 1990
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 2 (21) , 4763-4767
- https://doi.org/10.1088/0953-8984/2/21/011
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Screening of positrons in semiconductors and insulatorsPhysical Review B, 1989
- Positron-annihilation spectroscopy of native vacancies in as-grown GaAsPhysical Review B, 1988
- Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg1-x CdxTe by Positron AnnihilationMaterials Science Forum, 1986
- Measurement and analysis of the phase diagram and thermodynamic properties in the Hg–Cd–Te systemJournal of Vacuum Science and Technology, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981