Orbital susceptibility of higher-stage graphite intercalation compounds

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Abstract
The calculated results of the orbital susceptibility for first- to fifth-stage graphite intercalation compounds (GIC’s) are presented. In this calculation a new formalism for calculating the orbital susceptibility is presented. Furthermore, in order to perform calculations in an analytical way, the effective Hamiltonian for reproducing the band structures of higher-stage GIC’s is introduced. In this Hamiltonian the effects of the inhomogeneous charge distribution along the c axis in higher-stage GIC’s and the interlayer interactions are taken into account within a thin-film model. It is shown that the interband effects between π bands split by the inhomogeneous charge distribution plays an essential role in determining the stage dependence of orbital susceptibility. Calculated results of the stage dependence of orbital susceptibility with charge transfer f=1.0 and f=0.3 are in good agreement with observed ones.