An amorphous silicon photodetector for picosecond pulses
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 66-68
- https://doi.org/10.1063/1.91276
Abstract
A new photoconductive detector utilizing an amorphous silicon film grown by CVD is demonstrated to have a response time of 40 ps. An estimate of the carrier mobility suggests a mechanism involving the rapid relaxation of photoexcited carriers from relatively mobile extended states to immobile localized states.Keywords
This publication has 4 references indexed in Scilit:
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- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973