Efficiency losses from carrier-type inhomogeneity in tungsten diselenide photoelectrodes
- 1 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11) , 949-951
- https://doi.org/10.1063/1.92193
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Photoelectrochemical Compatibility of n ‐ WSe2 and n ‐ MoSe2 with Various Redox SystemsJournal of the Electrochemical Society, 1980
- Relationship between surface morphology and solar conversion efficiency of tungsten diselenide photoanodesJournal of the American Chemical Society, 1980
- Photoelectrochemical behaviour of layer-type transition metal dichalcogenidesFaraday Discussions of the Chemical Society, 1980
- Evaluation and reduction of efficiency losses at tungsten diselenide photoanodesFaraday Discussions of the Chemical Society, 1980
- The Role of Surface Orientation in the Photoelectrochemical Behavior of Layer Type d‐Band SemiconductorsBerichte der Bunsengesellschaft für physikalische Chemie, 1979
- Semiconducting Properties of Single Crystals of n- and p-Type Tungsten Diselenide (WSe2)Journal of Applied Physics, 1968