High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy
- 16 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (3) , 239-241
- https://doi.org/10.1063/1.101000
Abstract
High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.Keywords
This publication has 10 references indexed in Scilit:
- Photoluminescence properties of ZnTe-ZnSe superlattices grown by hot-wall epitaxyJournal of Luminescence, 1988
- Resonant Raman scattering in ZnTe-ZnSe strained layer superlatticesJournal of Applied Physics, 1987
- Raman scattering from ZnTe-ZnSe strained-layer superlatticesApplied Physics Letters, 1986
- A proposal for p-type ZnS1-xSex–ZnTe superlatticesJournal of Applied Physics, 1985
- Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KC1 by a HWESurface Science, 1984
- Strained-layer superlattices from lattice mismatched materialsJournal of Applied Physics, 1982
- Observation of Folded Acoustic Phonons in a Semiconductor SuperlatticePhysical Review Letters, 1980
- X-ray diffraction from one-dimensional superlattices in GaAs1−xPxcrystalsJournal of Applied Crystallography, 1973
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963