Rapid thermal oxidation of silicon for thin gate dielectric
- 19 June 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (13) , 694-696
- https://doi.org/10.1049/el:19860475
Abstract
Rapid thermal oxidation of silicon has been carried out in the temperature range 1000 to 1250°C for an oxidation time of 5 to 60 s. The new kinetics data show that oxidation is carried out by a two-energy activation process. Assuming linear growth during the first 5 s of fast oxidation, the first process occurs with an activation energy Ea of 0.9 eV. The second process takes place with Ea = 1.4 eV for linear growth kinetics from 5 to 60 s.Keywords
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