Modeling of pulsed laser irradiation of thin silicon layers
- 31 March 1993
- journal article
- Published by Elsevier in International Journal of Heat and Mass Transfer
- Vol. 36 (4) , 919-924
- https://doi.org/10.1016/s0017-9310(05)80275-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Resonance Raman scattering in Si at elevated temperaturesPhysical Review B, 1984
- Pulsed laser annealing of GaAs and Si: Combined reflectivity and time-of-flight measurementsJournal of Applied Physics, 1983
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981