Glass Source Diffusion in Si and SiO[sub 2]

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Abstract
The general characteristics of film diffusion sources formed by the oxidation of and by O2 were examined, and the diffusion of B from these glass sources into Si and through films was studied at 1000°–1100°C. B diffusion in (100) Si in the solid solubility region exhibits strong concentration variations as junction depths are observed first to increase and then suddenly to decrease with increasing concentrations. B diffusion through films was examined in two distinct regions (i) the “solid” state region and (ii) the “melt through” region where the doped glass layer dissolves the barrier layer at the diffusion temperatures. Understanding of these glass film diffusion sources as “glasses” aids in the interpretation of these phenomena.

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