Abstract
By assuming that the scattering processes from other sources than grain‐boundaries can be described by a single relaxation time τ and then by solving a Boltzmann equation in which grain‐boundary scattering is accounted for, we have obtained an analytical expression for the thin monocrystalline film conductivity in terms of the reduced thickness k and the grain‐boundary reflection coefficient r. Numerical tables are given to show the agreement of the above expression with the Mayadas‐Shatzkes expression.

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