Hydrogen passivation of deep donor centres in high-purity epitaxial GaAs
- 5 August 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (16) , 715-716
- https://doi.org/10.1049/el:19820486
Abstract
The passivation of deep donor centres in high-purity, liquid-phase-epitaxial n-GaAs (ND−NA = 8−10 × 1013 cm−3) by reaction with atomic hydrogen has been observed using deep-level transient spectroscopy. Exposure to the hydrogen plasma for 3 h at 300°C neutralised 99% of the deep levels to a depth of approximately 7 μm.Keywords
This publication has 0 references indexed in Scilit: