Asymptotic estimates of diffusion times for rapid thermal annealing

15 February 1985

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 46 (4) , 433-435
https://doi.org/10.1063/1.95603

Abstract

Temperature profiles for rapid thermal annealing of ion implanted material are analyzed using asymptotic methods. Although only rapid thermal annealing is discussed, these methods are also applicable to many other annealing processes. Formulas for effective diffusion distance and effective annealing time are given which correct for the deviations of actual annealing profiles from ideal annealing profiles. The three major deviations considered are (1) ramp terms, (2) rising plateaus, and (3) plateau overshoots. The analysis shows that even relatively small deviations can have sizable effects.

Keywords

This publication has 2 references indexed in Scilit:

Thermal desorption of gases
Published by Elsevier ,2002
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
Applied Physics Letters, 1984