Autodoping Phenomena in Epitaxial Silicon

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Abstract
Autodoping experiments were performed using a radiation‐heated Applied Materials Corporation (AMC) 7600 epitaxial reactor, (100) n‐doped silicon wafers, arsenic‐doped buried layers (subcollector) of total implanted or diffused dose of , and buried layer areas between 10 and 100% wafer area. Intentionally undoped epitaxial layers of 1.4 μm thickness were grown. The lateral autodoping was found to be very uniform with no distinct flow pattern‐induced spatial distribution. Autodoping follows a square root law with respect to buried layer area. Autodoping shows a linear relationship with respect to buried layer doping. An analysis of the buried layer doping profile identifies the out‐diffusion source with electrically inactive arsenic, about 50% of total implanted or diffused dopant. Less than 1% of the out‐diffusing arsenic is incorporated into the wafer surface and growing epitaxial layer.

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