Trap-limited interstitial diffusion and enhanced boron clustering in silicon

• 30 January 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 66  (5) , 568-570
• https://doi.org/10.1063/1.114015

Abstract

Keywords

• MOLECULAR BEAM EPITAXY
• SUPERLATTICES
• PENETRATION DEPTH
• ION IMPLANTATION