Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs

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Abstract
Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature (T) independent while minority carrier mobilities exhibit a roughly 1/T dependence. Majority carrier freezeout, which reduces both majority–minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/T minority carrier mobility dependence. The difference in minority and majority carrier mobility T dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority–minority carrier scattering.

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