Room-temperature CW operation of 1.3 μm distributed-feedback GaInAsP/InP lasers

30 September 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (20) , 857-858
https://doi.org/10.1049/el:19820581

Abstract

Distributed-feedback GaInAsP/InP lasers with a low threshold current emitting at 1.3 μm have been successfully fabricated. A minimum CW threshold current of 66 mA was obtained at room temperature. The temperature coefficient of lasing wavelength was 1 Å/°C, which is about a fifth of that for Fabry-Perot lasers. A stable single longitudinal mode was obtained up to 52°C in a p-side-up configuration.

Keywords

DISTRIBUTED-FEEDBACK GAINASP/INP LASERS
LOW THRESHOLD CURRENT
SEMICONDUCTOR LASERS
TEMPERATURE COEFFICIENT OF LASING WAVELENGTH
ROOM TEMPERATURE CW OPERATION
DFB LASERS
OPTICAL COMMUNICATIONS LASER SOURCES
52 DEGREE C OPERATION
STABLE SINGLE LONGITUDINAL MODE
1.3 MICRON LASER
P-SIDE-UP CONFIGURATION