Filled and empty states of H:GaAs(110) through electron energy-loss and photoemission spectroscopies

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Abstract
The energy distribution of filled and empty states of H:GaAs (100) surface is reported. The results have been obtained by the combined analysis of photoemission and energy-loss spectra (ELS). The main emphasis is devoted to the ELS interpretation of interface plasmon losses of the H:GaAs (110) surface layer. New excitations are found at the vacuum–H:GaAs (110)–GaAs interface and the energy difference between filled and empty states is determined. Starting from filled electronic states as localized by photoemission measurements, empty states of the surface layer are located.

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