Study of diluted magnetic semiconductor: Co-doped ZnO
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- 18 November 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (21) , 4020-4022
- https://doi.org/10.1063/1.1517405
Abstract
We report on the high-temperature ferromagnetism in Co-doped ZnOfilmsfabricated by the sol–gel method above 350 K. The lattice constant of c axis of wurtzite Zn 1−x Co x O follows Vergard’s law for 0<x<0.25. For Zn 1−x Co x O with x⩾0.25, a secondary phase is detected. The Zn 1−x Co x O exhibits ferromagnetic behavior with a Curie temperature higher than 350 K. By the results of x-ray photoelectron spectroscopy measurement, we assume that Co occupied the Zn site without changing the wurtzite structure. In the case of x=0.2, the coercive field measured by a magnetization–magnetic field hysteresis curve at 350 K was nearly 80 Oe. Additionally, we investigated the electric structure through first-principles pseudopotential plane-wave calculation.Keywords
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