Influence of Noi es and Electrons on the Solubility of Lithium in Boron-Doped Silicon
- 1 February 1956
- journal article
- transactions
- Published by Springer Nature in JOM
- Vol. 8 (2) , 276-282
- https://doi.org/10.1007/bf03377685
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Ionization and Solubility in SemiconductorsPhysical Review B, 1955
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954
- Physico-chemical properties of diatomic crystals in relation to the incorporation of foreign atoms with deviating valencyPhysica, 1954
- Chemical Effects Due to the Ionization of Impurities in SemiconductorsThe Journal of Chemical Physics, 1953
- Diffusion of Lithium into Germanium and SiliconPhysical Review B, 1953
- Thermodynamic Investigations on Ternary AmalgamsThe Journal of Chemical Physics, 1951
- Solubility Relations in Ternary Solid Solutions of Ionic CompoundsThe Journal of Chemical Physics, 1950
- Beitrag zur Theorie des Anlauf Vorganges. IIIZeitschrift für Physikalische Chemie, 1938