Schottky mixer diodes made by a new method

4 August 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (16) , 472-473
https://doi.org/10.1049/el:19770341

Abstract

In the letter, preliminary results are reported on GaAs Schottky mixer diodes on material grown by means of a new method based on organometallic cracking at low pressures.

Keywords

ORGANOMETALLIC CRACKING
SCHOTTKY MIXER DIODES