A New Ion Beam Deposition Technique for Low Temperature Silicon Epitaxy
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputteringJournal of Applied Physics, 1989
- Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-BeamsJapanese Journal of Applied Physics, 1980
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977