Graphical method for estimating phonon- and impurity-scattering contributions in heavily doped semiconductors

3 June 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (11) , 315-317
https://doi.org/10.1049/el:19710217

Abstract

A graphical method is presented for determining the reduced Fermi energy and the relative strength of lattice scattering to impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power.

Keywords

PHONON ESTIMATION
THERMOELECTRICITY
SCATTERING PROCESSES
HALL MOBILITY
GRAPHICAL METHOD
SEMICONDUCTOR DOPING
IMPURITY SCATTERING CONTRIBUTIONS

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