Deep donors in GaSb grown by molecular beam epitaxy
- 15 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1645-1647
- https://doi.org/10.1063/1.104075
Abstract
A deep state possessing similar properties to those reported for DX centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to electron capture and a correspondingly small capture cross section for this deep level. The deep level activity of selenium‐ and tellurium‐doped GaSb has also been investigated.Keywords
This publication has 8 references indexed in Scilit:
- A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxyJournal of Applied Physics, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- D X-center-like traps and persistent photoconductivity in Te-doped AlxGa1−xSb on GaSbJournal of Applied Physics, 1988
- Electron Localization by a Metastable Donor Level in: A New Mechanism Limiting the Free-Carrier DensityPhysical Review Letters, 1988
- Sulfur doping behavior of gallium antimonide grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- I n s i t u Schottky contacts to molecular-beam epitaxially grown gallium antimonideJournal of Applied Physics, 1987
- A Simple Calculation of the DX Center Concentration Based on an L-Donor ModelJapanese Journal of Applied Physics, 1985
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981