Plasma-hydrogenated microwave and optoelectronic devices
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1-4) , 397-408
- https://doi.org/10.1016/0921-4526(91)90152-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Plasma-hydrogenated low-threshold wide-band 1.3 μm buried ridge structure laserElectronics Letters, 1989
- High-resolution infrared study of the neutralization of silicon donors in gallium arsenidePhysical Review B, 1988
- High-power gain-guided coupled-stripe quantum well laser array by hydrogenationApplied Physics Letters, 1988
- Stripe-geometry AlxGa1−xAs-GaAs quantum well lasers via hydrogenationApplied Physics Letters, 1987
- Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si)Electronics Letters, 1987
- Si donor neutralization in high-purity GaAsApplied Physics Letters, 1987
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986