On the method and results of a dislocation structure analysis of Ga(As, P) by etching
- 16 May 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 29 (1) , K5-K9
- https://doi.org/10.1002/pssa.2210290142
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAsPhysica Status Solidi (a), 1974
- Ergebnisse bei der Darstellung von GaAs‐EinkristallenCrystal Research and Technology, 1973
- A Cross-Hatch Pattern in GaAs[sub 1−x]P[sub x] Epitaxially Grown on GaAs SubstrateJournal of the Electrochemical Society, 1972
- Epitaxial Growth of GaAs1-xPxJapanese Journal of Applied Physics, 1971
- Dislocations in GaAs17−xPxJournal of Applied Physics, 1969
- Defects in the sphalerite structureJournal of Physics and Chemistry of Solids, 1962