Anderson transition and thermal effects on electron states in amorphous silicon

Preprint

30 September 1999

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9909455

Abstract

I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the effect of thermal disorder on localized electron states is considered. It is found that under readily accessible conditions, localized (midgap or band tail) states and their conjugate energies may fluctuate dramatically. The possible importance of non-adiabatic atomic dynamics to doped or photo-excited systems is briefly discussed.

Keywords

PROPERTIES OF ELECTRON
ANDERSON TRANSITION
STATES IN AMORPHOUS
EFFECT OF THERMAL
ELECTRON STATES
SILICON
ATOM

All Related Versions

Version 1, 1999-09-30, ArXiv
Published version: Journal of Non-Crystalline Solids, 266-269, 211.

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