Raman microprobe analysis of tungsten silicide

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Abstract
The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman microprobe during the examination of an annealed sample of tungsten deposited over crystalline silicon. A similar examination of fine tungsten lines, 8 μm wide by 20 nm thick, selectively deposited on a crystalline silicon surface using laser-induced chemical vapor deposition techniques, produced an identical spectrum superimposed with that of the silicon substrate. This observation demonstrates the capability of the Raman microprobe to analyze the formation of solid silicide phases on a microscopic scale. The technique offers a rapid and nondestructive method for the identification of tungsten silicide either in the bulk or as a component in an integrated circuit.