Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition
- 1 August 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (8) , 1843-1847
- https://doi.org/10.1149/1.2130012
Abstract
Organometallic chemical vapor deposition of on sapphire, using the reaction of diethylzinc with , , and oxidizing gas systems, has been studied. Epitaxial films have been achieved at temperatures of 400° and 730°C, respectively, in the first two systems. The films have been characterized using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.Keywords
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