Resists and Other Critical Issues in 157-nm Lithography.
- 1 January 2000
- journal article
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 13 (3) , 369-372
- https://doi.org/10.2494/photopolymer.13.369
Abstract
This paper outlines the critical issues facing the implementation of 157-nm lithography as a sub-100-nm technology. Special emphasis is placed on 157-nm photoresist options, including ultrathin resists and thicker resists with new chemistries. The status of other issues is also presented, such as mask materials, pellicles, optical materials, and coatings.Keywords
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