Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C
- 1 November 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (12) , 4669-4671
- https://doi.org/10.1063/1.1709201
Abstract
Precise cell dimensions of GaAs, GaAs0.59P0.41, GaAs0.5P0.5, and GaP have been determined from x‐ray powder diffraction patterns from −62° to 200°C. Within the temperature range investigated, the constant thermal coefficients of expansion are, respectively, 6.86×10−6, 7.81×10−6, 5.91×10−6, and 5.81×10−6°C−1. The cell dimension of pure GaP (impurity less than 3.0 ppm) is 5.4495±0.0001 Å at 24°C.This publication has 8 references indexed in Scilit:
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