High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 1077-1080
• https://doi.org/10.4028/www.scientific.net/msf.264-268.1077

Abstract

Keywords

• HIGH-TEMPERATURE
• ION IMPLANTATION
• JUNCTION FIELD EFFECT TRANSISTOR (JFET)
• MONOLITHIC