High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers
- 1 January 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (1) , 93-95
- https://doi.org/10.1063/1.116782
Abstract
An improved method for characterizing thin oxide films using Fowler‐Nordheim field emission is reported. The method uses a conducting‐tip atomic force microscope with dual feedback systems, one for the topography and a second for the field emission bias voltage. Images of the voltage required to maintain a 10 pA emission current through a 3 nm oxide film thermally grown on p‐type Si(100) demonstrate a spatial resolution of 8 nm.Keywords
This publication has 0 references indexed in Scilit: