Carrier lifetime and linewidth enhancement factor measurements from cross-modulation characteristics in semiconductor optical amplifiers
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiersIEEE Photonics Technology Letters, 1990
- On the linewidth enhancement factor α in semiconductor injection lasersApplied Physics Letters, 1983