Characterization of thickness dependence on defect density and hydrogen passivation for thin film polycrystalline silicon solar cells
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1311-1314 vol.2
- https://doi.org/10.1109/wcpec.1994.520187
Abstract
Thickness dependence on defect density and hydrogen passivation for thin film polycrystalline silicon solar cells fabricated by the zone-melting recrystallization (ZMR) technique are experimentally investigated. We confirmed that thinning of the active layer is available for increasing Voc for the cells with relatively high defect density (1/spl times/10/sup 6/-1/spl times/10/sup 7/ cm/sup -2/). At the same time, it was clarified that the effectiveness of hydrogen passivation is strongly dependent on the total amount of 3-dimensionally distributed defect in the active layer. Light-induced degradation phenomenon of hydrogen passivated cells was also investigated under the conditions of AM1.5, 125 mW/cm/sup 2/, and 48/spl deg/C. Significant degradation was not observed over 300 hours such as in hydrogenated amorphous silicon solar cells.Keywords
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