Breakdown of ultrathin anodic valve metal oxide films in metal-insulator-metal-contacts compared with metal-insulator-electrolyte contacts
- 1 July 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 414 (2) , 296-303
- https://doi.org/10.1016/s0040-6090(02)00453-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Aluminium oxide tunnel junctions: influence of preparation technique, sample geometry and oxide thicknessThin Solid Films, 1999
- Localized anodic oxide films on Si: preparation and propertiesElectrochimica Acta, 1994
- Thin anodic oxide layers on aluminium and other valve metals: high field regimeMaterials Science and Engineering: R: Reports, 1993
- Emission of energetic electrons from tunnel junctionsPhysical Review B, 1984
- Theory of electrical breakdown during formation of barrier anodic filmsElectrochimica Acta, 1977
- Breakdown in silicon oxide−A reviewJournal of Vacuum Science and Technology, 1977
- Dielectric instability and breakdown in SiO2 thin filmsJournal of Vacuum Science and Technology, 1976
- Filamentary breakdown in thin anodic filmsJournal of Non-Crystalline Solids, 1975
- Breakdown conduction in thin dielectric films: A bibliographical surveyThin Solid Films, 1974
- Generalized Thermal J-V Characteristic for the Electric Tunnel EffectJournal of Applied Physics, 1964