Low 1 /f noise SiGe HBTs with applicationto low phase noise microwave oscillators
- 20 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (24) , 2050-2052
- https://doi.org/10.1049/el:19971363
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Low-frequency noise in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1995
- SiGe-HBTs with high
f
T
at moderatecurrentdensitiesElectronics Letters, 1994