Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon
- 1 October 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (10) , 4590-4592
- https://doi.org/10.1063/1.322383
Abstract
The Hall coefficient and conductivity of p‐doped Si samples have been measured in a range of temperatures varying from 200 to 30 °K; from the elaboration of these measurements and neutron activation analysis, both donor and free‐carrier concentrations were obtained. Comparison between the theoretical and experimental values of the electron density brought out that in these samples a modified conduction band coexists with an impurity band, thus confirming the results obtained in the same range of impurity concentration for As‐doped Si. Some limitations of the theoretical approaches to the density of states versus energy relationships are discussed.This publication has 16 references indexed in Scilit:
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