A byte organized NMOS/CCD memory with dynamic refresh logic
- 1 February 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (2) , 86-92
- https://doi.org/10.1109/T-ED.1976.18357
Abstract
A 9216 bit NMOS/CCD memory organized as 1024 words by 9 bits is described. It employs a buried channel two phase charge-coupled device (CCD) storage cell combined with n-channel silicon gate Isoplanar (TM) MOS technology for logic functions and TTL compatible interfacing. Techniques of charge detection by using internally generated reference voltages are detailed. A low noise CCD input writing scheme and a dynamic sense-refresh cell are descried. Input-output logic is given that permits operating modes of read, write, read-modify-write, and recirculate. Operation at the specification limits of 100 kHz and 2 MHz is shown.Keywords
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