Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

1 December 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (12) , 645-647
https://doi.org/10.1109/edl.1985.26261

Abstract

Self-aligned gate by ion implantation n-channel and p-channel high-mobility (Al,Ga)As/GaAs heterostructure insulated-gate field-effect transistors (HIGFET's) have been fabricated on the same planar wafer surface for the first time. Enhancement-mode n-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 218 mS/mm at room temperature and 385 mS/mm at 77 K. Enhancement-mode p-channel (Al,Ga)As/GaAs HIGFET's have demonstrated extrinsic transconductances of 28 mS/mm at room temperature and 59 mS/mm at 77 K. There are the highest transconductance values ever reported on a p-channel FET device.

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