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Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers
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Publications
Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers
Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers
JT
J. E. Thomas
J. E. Thomas
DY
D. R. Young
D. R. Young
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1 September 1964
journal article
Published by
IBM
in
IBM Journal of Research and Development
Vol. 8
(4)
,
368-375
https://doi.org/10.1147/rd.84.0368
Abstract
No abstract available
Cited
Cited by 38 articles
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