High-frequency time-dependent breakdown of SiO/sub 2/
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (6) , 267-269
- https://doi.org/10.1109/55.82056
Abstract
The time-dependent dielectric breakdown of thin oxides (8.6-11 nm) are compared under DC, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under DC conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field accelerations of breakdown time are similar for DC and pulse stressing.Keywords
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