Current gain degradation due to displacement damage for graded base transistors
- 1 March 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (3) , 413-414
- https://doi.org/10.1109/PROC.1967.5504
Abstract
An expression for current gain applicable to both homogeneous and graded base transistors in a radiation environment is developed. Using this development, it is shown that damage constant can be accurately determined for both homogeneous and graded base transistors, with identical experimental procedures and design equations.Keywords
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